Design and modeling of a microwave plasma enhanced chemical vapor deposition system at 2.45 GHz

Abstract

Solid thin films developed by a microwave plasma-enhanced chemical vapor deposition (MPECVD) system have excellent electrical properties, good substrate adhesion, and excellent step coverage. Due to these advantages, MPECVD films have been widely used in very large-scale integrated circuit technology, optoelectronic devices, MEMS, and other fields. The MPECVD method is one of the promising candidates for synthetic CNTs due to low temperature and large area growth. Recently, this technique has gained popularity in graphene and diamond film fabrication. This paper discusses the design of an MPECVD chamber operated at 2.45 GHz of frequency using a finite element method simulation. The design consists of a coaxial waveguide and a cylindrical chamber at the center connected using 4 identical slots in each direction. For the magnetic coupling, slots placed at the bottom of the central cavity. TM011 mode in the inner chamber is employed to generate the plasma at 2.45GHz. In addition, we consider the effects of input power and gas pressure on plasma density.