Design and modeling of a microwave plasma enhanced chemical vapor deposition system at 2.45 GHz
DC Field | Value | Language |
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dc.contributor.author | Jiang, Yilang | - |
dc.contributor.author | Aranganadin, Kaviya | - |
dc.contributor.author | Hsu, Hua-Yi | - |
dc.contributor.author | Lin, Ming-Chieh | - |
dc.date.accessioned | 2022-07-07T13:27:52Z | - |
dc.date.available | 2022-07-07T13:27:52Z | - |
dc.date.created | 2021-11-22 | - |
dc.date.issued | 2020-10 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144473 | - |
dc.description.abstract | Solid thin films developed by a microwave plasma-enhanced chemical vapor deposition (MPECVD) system have excellent electrical properties, good substrate adhesion, and excellent step coverage. Due to these advantages, MPECVD films have been widely used in very large-scale integrated circuit technology, optoelectronic devices, MEMS, and other fields. The MPECVD method is one of the promising candidates for synthetic CNTs due to low temperature and large area growth. Recently, this technique has gained popularity in graphene and diamond film fabrication. This paper discusses the design of an MPECVD chamber operated at 2.45 GHz of frequency using a finite element method simulation. The design consists of a coaxial waveguide and a cylindrical chamber at the center connected using 4 identical slots in each direction. For the magnetic coupling, slots placed at the bottom of the central cavity. TM011 mode in the inner chamber is employed to generate the plasma at 2.45GHz. In addition, we consider the effects of input power and gas pressure on plasma density. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Design and modeling of a microwave plasma enhanced chemical vapor deposition system at 2.45 GHz | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lin, Ming-Chieh | - |
dc.identifier.doi | 10.1109/IVEC45766.2020.9520464 | - |
dc.identifier.scopusid | 2-s2.0-85115308284 | - |
dc.identifier.bibliographicCitation | 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020, pp.339 - 340 | - |
dc.relation.isPartOf | 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020 | - |
dc.citation.title | 2020 IEEE 21st International Conference on Vacuum Electronics, IVEC 2020 | - |
dc.citation.startPage | 339 | - |
dc.citation.endPage | 340 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Diamond films | - |
dc.subject.keywordPlus | Finite element method | - |
dc.subject.keywordPlus | Microwaves | - |
dc.subject.keywordPlus | Optoelectronic devices | - |
dc.subject.keywordPlus | Plasma density | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapor deposition | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Design and modeling | - |
dc.subject.keywordPlus | Integrated circuit technology | - |
dc.subject.keywordPlus | Microwave plasma | - |
dc.subject.keywordPlus | Microwave plasma-enhanced chemical vapor deposition | - |
dc.subject.keywordPlus | Microwave plasma-enhanced chemical vapor deposition chamber | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapor deposition systems | - |
dc.subject.keywordPlus | Solid thin films | - |
dc.subject.keywordPlus | Step Coverage | - |
dc.subject.keywordPlus | Substrate adhesion | - |
dc.subject.keywordPlus | Very large scale integrated circuit | - |
dc.subject.keywordPlus | Plasma CVD | - |
dc.subject.keywordAuthor | FEM | - |
dc.subject.keywordAuthor | Microwave plasma | - |
dc.subject.keywordAuthor | MPECVD chamber | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9520464 | - |
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