Conductivity Enhancement of Silicon Nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Jae-Woo | - |
dc.contributor.author | Park, Seongju | - |
dc.contributor.author | Li, Xianhong | - |
dc.contributor.author | Baek, In-Bok | - |
dc.contributor.author | Lee, Seongjae | - |
dc.contributor.author | Jang, Moongyu | - |
dc.date.accessioned | 2022-07-07T13:36:48Z | - |
dc.date.available | 2022-07-07T13:36:48Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144686 | - |
dc.description.abstract | Current-voltage (I-V) characteristics for various silicon wires of different length-to-width ratios were numerically calculated by solving the Poisson equation and the current continuity equations for electrons and holes self-consistently. We found that, as the silicon wire became thinner or the length-to-width aspect ratio becomes higher, the I-V data deviated more from the Ohmic relation: the current density at a certain bias voltage was larger. In the case of a 500-nm-long silicon wire with n-type doping of 1 x 10(16) cm(3), for example, the current density of a silicon wire at a bias voltage of 2 volts increased by nearly threefold as the length-to-width ratio of wires was increased from 1 to 25. This behavior is attributed to an enhanced field at the source due to the strong stray field configuration near the contacts at both ends of a wire and to the large carrier build-up in the middle. Our result suggests that a classical treatment of nanowire transport with a proper account of the nonuniform field distribution along the wire may partly explain the conductivity enhancement phenomenon often observed in various nanowires and nanotubes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Conductivity Enhancement of Silicon Nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.3938/jkps.61.1990 | - |
dc.identifier.scopusid | 2-s2.0-84871890871 | - |
dc.identifier.wosid | 000313039600012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.12, pp.1990 - 1993 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 61 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1990 | - |
dc.citation.endPage | 1993 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001722784 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | CARRIER MOBILITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Conductivity | - |
dc.subject.keywordAuthor | Silicon nanowire | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.61.1990 | - |
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