Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Conductivity Enhancement of Silicon Nanowires

Full metadata record
DC Field Value Language
dc.contributor.authorKo, Jae-Woo-
dc.contributor.authorPark, Seongju-
dc.contributor.authorLi, Xianhong-
dc.contributor.authorBaek, In-Bok-
dc.contributor.authorLee, Seongjae-
dc.contributor.authorJang, Moongyu-
dc.date.accessioned2022-07-07T13:36:48Z-
dc.date.available2022-07-07T13:36:48Z-
dc.date.created2021-05-12-
dc.date.issued2012-12-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144686-
dc.description.abstractCurrent-voltage (I-V) characteristics for various silicon wires of different length-to-width ratios were numerically calculated by solving the Poisson equation and the current continuity equations for electrons and holes self-consistently. We found that, as the silicon wire became thinner or the length-to-width aspect ratio becomes higher, the I-V data deviated more from the Ohmic relation: the current density at a certain bias voltage was larger. In the case of a 500-nm-long silicon wire with n-type doping of 1 x 10(16) cm(3), for example, the current density of a silicon wire at a bias voltage of 2 volts increased by nearly threefold as the length-to-width ratio of wires was increased from 1 to 25. This behavior is attributed to an enhanced field at the source due to the strong stray field configuration near the contacts at both ends of a wire and to the large carrier build-up in the middle. Our result suggests that a classical treatment of nanowire transport with a proper account of the nonuniform field distribution along the wire may partly explain the conductivity enhancement phenomenon often observed in various nanowires and nanotubes.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleConductivity Enhancement of Silicon Nanowires-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Seongjae-
dc.identifier.doi10.3938/jkps.61.1990-
dc.identifier.scopusid2-s2.0-84871890871-
dc.identifier.wosid000313039600012-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.12, pp.1990 - 1993-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume61-
dc.citation.number12-
dc.citation.startPage1990-
dc.citation.endPage1993-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001722784-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusCARRIER MOBILITY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordAuthorConductivity-
dc.subject.keywordAuthorSilicon nanowire-
dc.identifier.urlhttps://link.springer.com/article/10.3938/jkps.61.1990-
Files in This Item
Go to Link
Appears in
Collections
서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Lee, Seong Jae photo

Lee, Seong Jae
COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)
Read more

Altmetrics

Total Views & Downloads

BROWSE