Carrier charging effect of V3Si nanocrystals floating gate memory structure
DC Field | Value | Language |
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dc.contributor.author | Kim, Dongwook | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Hyo Jun | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-07T13:45:11Z | - |
dc.date.available | 2022-07-07T13:45:11Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144712 | - |
dc.description.abstract | We fabricated V3Si nanocrystals embedded in SiO2 dielectric layer as a function of post-annealing conditions and characterized their charging effect to apply a nonvolatile memory device. The V3Si thin layer of 5-nm-thickness was deposited on the SiO2 tunneling layer by r.f. sputtering system. To create nanocrystals structure, the post-annealing process in N-2 gas ambient by rapid thermal annealing method was done at temperature ranges from 600 degrees C to 1000 degrees C as a function of annealing times. After the post-annealing at 800 degrees C for 5 s, the spherical shaped V3Si nanocrystals with average diameter of 4 nm were formed. From the nano-floating gate capacitor structure with V3Si nanocrystals, the memory window was measured about 3.4 V when the sweeping voltages applied from -9 V to 9 V and from 9 V to -9 V. This result indicates that V3Si nanocrystals have a strong potential for the nonvolatile memory device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Carrier charging effect of V3Si nanocrystals floating gate memory structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.tsf.2012.02.045 | - |
dc.identifier.scopusid | 2-s2.0-84867065437 | - |
dc.identifier.wosid | 000309905900022 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.521, pp.94 - 97 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 521 | - |
dc.citation.startPage | 94 | - |
dc.citation.endPage | 97 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SILICIDES | - |
dc.subject.keywordPlus | V/SI | - |
dc.subject.keywordAuthor | Nanocrystals | - |
dc.subject.keywordAuthor | V3Si | - |
dc.subject.keywordAuthor | Nonvolatile memory | - |
dc.subject.keywordAuthor | Tunnel layer | - |
dc.subject.keywordAuthor | Thermal annealing | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609012001770?via%3Dihub | - |
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