Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon
DC Field | Value | Language |
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dc.contributor.author | Lee, Jungwoo | - |
dc.contributor.author | Park, Taehee | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Kim, Heesu | - |
dc.contributor.author | Lee, Sanghun | - |
dc.contributor.author | Lee, Haiwon | - |
dc.contributor.author | Yi, Whikun | - |
dc.date.accessioned | 2022-07-07T13:45:14Z | - |
dc.date.available | 2022-07-07T13:45:14Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144713 | - |
dc.description.abstract | This paper reports the characteristic field emission (FE) properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate, as well as on the top surface of a PS substrate. Their turn-on fields and emission current densities are measured and compared with those of other types of SWNTs in similar environments. Investigation of field emission properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate reveals a low turn-on field of about 2.25 V μm-1 at 10 μA/cm2 and a high field-enhancement factor (6182) compare with other samples. A life time stability test is performed by monitoring the current density change before and after repeated exposure to O2, suggesting that the pore channel can effectively prevent O2+ ion etching from destroying the SWNTs within the pores of the PS layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE Computer Society | - |
dc.title | Field emission properties of a three-dimensional network of single-walled carbon nanotubes inside pores of porous silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yi, Whikun | - |
dc.identifier.doi | 10.1109/IVNC.2012.6316970 | - |
dc.identifier.scopusid | 2-s2.0-84869059485 | - |
dc.identifier.bibliographicCitation | Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, pp.362 - 363 | - |
dc.relation.isPartOf | Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 | - |
dc.citation.title | Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 | - |
dc.citation.startPage | 362 | - |
dc.citation.endPage | 363 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Artificial life | - |
dc.subject.keywordPlus | Carbon nanotubes | - |
dc.subject.keywordPlus | Etching | - |
dc.subject.keywordPlus | Field emission | - |
dc.subject.keywordPlus | Nanoelectronics | - |
dc.subject.keywordPlus | Nanotubes | - |
dc.subject.keywordPlus | Porous silicon | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Emission current density | - |
dc.subject.keywordPlus | Field emission property | - |
dc.subject.keywordPlus | Ion etching | - |
dc.subject.keywordPlus | Pore channels | - |
dc.subject.keywordPlus | Single-walled carbon nanotube (SWNTs) | - |
dc.subject.keywordPlus | Three-dimensional networks | - |
dc.subject.keywordPlus | Top surface | - |
dc.subject.keywordPlus | Turn-on field | - |
dc.subject.keywordPlus | Single-walled carbon nanotubes (SWCN) | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | Field emission | - |
dc.subject.keywordAuthor | porous silicon | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6316970 | - |
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