Electronic Transport of Lateral PtSi/n/n(+)-Si Schottky Diodes
DC Field | Value | Language |
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dc.contributor.author | Li, Xianhong | - |
dc.contributor.author | Baek, In-Bok | - |
dc.contributor.author | Lee, Seongjae | - |
dc.contributor.author | Jang, Moongyu | - |
dc.date.accessioned | 2022-07-07T13:51:08Z | - |
dc.date.available | 2022-07-07T13:51:08Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144747 | - |
dc.description.abstract | We investigated the transport properties of a lateral PtSi/n/n(+)-Si Schottky diode prepared on an n-type silicon-on-insulator (SOI) wafer with a special attention on the bipolar transport and the surface effect. With applying a back-gate bias changing from +18 V to -18 V, the unipolar transport behavior switched over to the bipolar one, where an enhanced surface recombination rate due to a high surface-to-volume ratio produced a current density similar to 3 x 10(3) A/cm(2) for 2 V bias through a 40 nm-thick and 18 mu m-long nanoribbon. The recombination time was estimated to be similar to 1 mu s from independent CV measurements, which is much smaller value than that of a bulk. The local Fermi energy level for electrons at the channel center was monitored by an additional voltage probe during each I-D-V-D measurement and it revealed the intricate nature of the bipolar transport manifested by the huge asymmetrical hysteretic behavior on a drain bias cycle which is attributed to the charge storage effect and asymmetrical junction profiles. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Electronic Transport of Lateral PtSi/n/n(+)-Si Schottky Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.1166/jnn.2012.6321 | - |
dc.identifier.scopusid | 2-s2.0-84865145658 | - |
dc.identifier.wosid | 000307604700126 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5799 - 5803 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 5799 | - |
dc.citation.endPage | 5803 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LABEL-FREE DETECTION | - |
dc.subject.keywordPlus | ELECTRICAL DETECTION | - |
dc.subject.keywordPlus | NANOWIRE NANOSENSORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | DNA | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Silicon Nanoribbon | - |
dc.subject.keywordAuthor | Bipolar Transport | - |
dc.subject.keywordAuthor | Surface Recombination | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000007/art00126 | - |
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