The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
DC Field | Value | Language |
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dc.contributor.author | Jang, Moongyu | - |
dc.contributor.author | Lee, Seongjae | - |
dc.date.accessioned | 2022-07-07T14:10:39Z | - |
dc.date.available | 2022-07-07T14:10:39Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144798 | - |
dc.description.abstract | 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (>10(6)) with low leakage current less than 10(-5) mu A/mu m due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 mu A/mu m when drain and gate voltages were 2 V and 3 V. for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.1016/j.tsf.2011.09.081 | - |
dc.identifier.scopusid | 2-s2.0-84855942365 | - |
dc.identifier.wosid | 000300459200093 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.520, no.6, pp.2166 - 2169 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 520 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2166 | - |
dc.citation.endPage | 2169 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Dielectric devices | - |
dc.subject.keywordPlus | Erbium | - |
dc.subject.keywordPlus | Schottky barrier diodes | - |
dc.subject.keywordPlus | Silicides | - |
dc.subject.keywordPlus | Transistors | - |
dc.subject.keywordPlus | Transmission electron microscopy | - |
dc.subject.keywordAuthor | Erbium silcide | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor field-effect transistors | - |
dc.subject.keywordAuthor | Short channel | - |
dc.subject.keywordAuthor | Transmission electron microscopy | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609011017305?via%3Dihub | - |
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