Linearly Polarized Light Emission from InGaN/GaN Quantum Well Structure with High Indium Composition
DC Field | Value | Language |
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dc.contributor.author | Song, Hooyoung | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Han, Il Ki | - |
dc.contributor.author | Lee, Sung-Ho | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.date.accessioned | 2022-07-07T14:16:36Z | - |
dc.date.available | 2022-07-07T14:16:36Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144830 | - |
dc.description.abstract | We fabricated yellow (575 nm) emitting a-plane InGaN/GaN light emitting diode (LED). Microstructure and stress relaxation of the InGaN well layer were observed from the images of dark field transmission electron microscopy. The LED chip was operated at 3.7 V, 20 mA, and the polarization-free characteristic in nonpolar InGaN layer was confirmed from a small blue-shift of similar to 1.7 nm with increase of current density. The high photoluminescence (PL) efficiency of 30.4% showed that this non-polar InGaN layer has a potential of application to green-red long wavelength light emitters. The PL polarization ratio at 290 K was 0.25 and the energy difference between two subbands was estimated to be 40.2 meV. The low values of polarization and energy difference were due to the stress relaxation of InGaN well layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Linearly Polarized Light Emission from InGaN/GaN Quantum Well Structure with High Indium Composition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1166/jnn.2011.4316 | - |
dc.identifier.scopusid | 2-s2.0-84863174883 | - |
dc.identifier.wosid | 000298363900123 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.10, pp.9222 - 9226 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 9222 | - |
dc.citation.endPage | 9226 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | EMITTING-DIODES | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | EXCITONS | - |
dc.subject.keywordAuthor | InGaN/GaN Quantum Wells | - |
dc.subject.keywordAuthor | Nonpolar (11-20) Plane | - |
dc.subject.keywordAuthor | High Indium Compositions | - |
dc.subject.keywordAuthor | Optical Polarization | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000010/art00123 | - |
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