Characteristics of Cl-doped MoS2 field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Taeyoung | - |
dc.contributor.author | Kim, Yoonsok | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-07T15:04:02Z | - |
dc.date.available | 2022-07-07T15:04:02Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145167 | - |
dc.description.abstract | MoS2 is among the two-dimensional (2D) transition metal dichalcogenides (TMD) and has been studied as a potential semiconductor material for various devices. To increase the performance of MoS2-based devices, contact engineering of metal to TMD materials has recently become an area of focus. The doping method is one way to reduce resistance, and molecular doping is a suitable doping method for MoS2 with a very thin layer structure. We demonstrate controllable molecular doping on MoS(2 )transistors using 1,2 dichloroethane (DCE) solution. Chloride molecules contained within the DCE solution act as an n-type dopant and increase the carrier density. The doping effects were confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy, and current-voltage characteristics. We observed that the threshold voltages shifted toward the negative direction, implying electron doping of MoS2 after Cl-doping. Additionally, the field-effect mobility and the carrier densities were enhanced from 11.9 cm(2).V-1.s(-1) to 72.8 cm(2).V-1.s(-1) and from 3.62 x 10(11) cm(-2) to 1.37 x 10(12) cm(-2), respectively, by increasing the molar concentration of 1,2-dichloroethane solution to 12.6 M. (C) 2020 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Characteristics of Cl-doped MoS2 field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.sna.2020.112165 | - |
dc.identifier.scopusid | 2-s2.0-85086874621 | - |
dc.identifier.wosid | 000571664500007 | - |
dc.identifier.bibliographicCitation | SENSORS AND ACTUATORS A-PHYSICAL, v.312, pp.1 - 5 | - |
dc.relation.isPartOf | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.title | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.citation.volume | 312 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | SHEET | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | Chloride molecule | - |
dc.subject.keywordAuthor | n-type doping | - |
dc.subject.keywordAuthor | Transition metal dichalcogenides | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0924424720300881?via%3Dihub | - |
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