Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ho-In | - |
dc.contributor.author | Park, Jinseon | - |
dc.contributor.author | Kim, Yun Ji | - |
dc.contributor.author | Heo, Sunwoo | - |
dc.contributor.author | Hwang, Jeongwoon | - |
dc.contributor.author | Kim, Seung-Mo | - |
dc.contributor.author | Lee, Yongsu | - |
dc.contributor.author | Cho, Kyeongjae | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.contributor.author | Lee, Byoung Hun | - |
dc.date.accessioned | 2022-07-07T17:33:45Z | - |
dc.date.available | 2022-07-07T17:33:45Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/145331 | - |
dc.description.abstract | A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>10(6)) and an off current density lower than 1 nA cm(-2). These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 degrees C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1039/c9nr10988a | - |
dc.identifier.scopusid | 2-s2.0-85089787300 | - |
dc.identifier.wosid | 000561429100047 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.12, no.32, pp.16755 - 16761 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 12 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 16755 | - |
dc.citation.endPage | 16761 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2020/NR/C9NR10988A | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.