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Voltage Balance Switching Scheme for Series-Connected SiC MOSFET LLC Resonant Converter

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dc.contributor.authorCha, Hwa-Rang-
dc.contributor.authorKim, Rae-Young-
dc.date.accessioned2022-07-09T03:45:02Z-
dc.date.available2022-07-09T03:45:02Z-
dc.date.created2021-05-12-
dc.date.issued2019-10-
dc.identifier.issn1996-1073-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147052-
dc.description.abstractTo achieve high efficiency and power density, silicon carbide (SiC)-based Inductor-Inductor-Capacitor (LLC) resonant converters are applied to the DC/DC converter stage of a solid-state transformer (SST). However, because the input voltage of an SST is higher than the rated voltage of a commercial SiC device, it is essential to connect SiC devices in series. This structure is advantageous in terms of voltage rating, but a parasitic capacitance tolerance between series-connected SiC devices causes voltage imbalance. Such imbalance greatly reduces system stability as it causes overvoltage breakdown of SiC device. Therefore, this paper proposes a switching scheme to solve the voltage imbalance between SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed scheme sequentially turns off series-connected SiC MOSFETs to compensate for the turn-off delays caused by parasitic capacitor tolerances. In addition, dead-time selection methods to achieve voltage balance and zero voltage switching simultaneously are provided in detail. To verify the effectiveness of the proposed scheme, experiments were conducted on a 2 kW series-connected SiC MOSFET LLC resonant converter prototype.-
dc.language영어-
dc.language.isoen-
dc.publisherMDPI-
dc.titleVoltage Balance Switching Scheme for Series-Connected SiC MOSFET LLC Resonant Converter-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Rae-Young-
dc.identifier.doi10.3390/en12204003-
dc.identifier.scopusid2-s2.0-85074778477-
dc.identifier.wosid000498391700198-
dc.identifier.bibliographicCitationENERGIES, v.12, no.20, pp.1 - 17-
dc.relation.isPartOfENERGIES-
dc.citation.titleENERGIES-
dc.citation.volume12-
dc.citation.number20-
dc.citation.startPage1-
dc.citation.endPage17-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEnergy & Fuels-
dc.relation.journalWebOfScienceCategoryEnergy & Fuels-
dc.subject.keywordPlusSOLID-STATE TRANSFORMER-
dc.subject.keywordPlusOPTIMAL-DESIGN METHODOLOGY-
dc.subject.keywordPlusGAN HEMT-
dc.subject.keywordPlusIGBTS-
dc.subject.keywordAuthorseries-connected SiC MOSFETs-
dc.subject.keywordAuthorvoltage balancing-
dc.subject.keywordAuthorsolid-state transformer-
dc.subject.keywordAuthorLLC resonant converter-
dc.identifier.urlhttps://www.mdpi.com/1996-1073/12/20/4003-
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