Improving Charge Collection from Colloidal Quantum Dot Photovoltaics by Single-Walled Carbon Nanotube Incorporation
- Authors
- Yang, Jonghee; Lee, Jongtaek; Lee, Junyoung; Yi, Whikun
- Issue Date
- Sep-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- quantum-dot; solar cell; single-walled carbon nanotube; charge collection; photo-CELIV; diffusion length
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.11, no.37, pp.33759 - 33769
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 11
- Number
- 37
- Start Page
- 33759
- End Page
- 33769
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147233
- DOI
- 10.1021/acsami.9b07089
- ISSN
- 1944-8244
- Abstract
- Improving charge collection is one of the key issues for high-performance PbS colloidal quantum dot photovoltaics (CQDPVs) due to the considerable charge loss resulting from the low mobility and large defect densities of the 1,2-ethanedithiol-treated PbS quantum dot hole-transporting layer (HTL). To overcome these limitations, single-walled carbon nanotubes (SWNTs) and C-60-encapsulated SWNTs (C-60@SVVNTs) are incorporated into the HTL in CQDPVs. SWNT-incorporated CQDPV demonstrates a significantly improved short-circuit current density (J(SC)), and C-60@SWNT-incorporated CQDPV exhibits an even higher J(SC) than that of pristine SWNT. Both result in improved power-conversion efficiencies. Hole-selective, photoinduced charge extraction with linearly increasing voltage measurements demonstrates that SWNT or C-60@SWNT incorporation improves hole-transporting behavior, rendering suppressed charge recombination and enhanced mobility of the HTL. The enhanced p-type characteristics and the improved hole diffusion lengths of SWNT- or C-60@SWNT-incorporated HTL bring improvement of the entire hole-transporting length and enable lossless hole collection, which results in the J(SC) enhancement of the CQDPVs.
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