Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Sangho | - |
dc.contributor.author | Kim, Hongbum | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-09T09:24:41Z | - |
dc.date.available | 2022-07-09T09:24:41Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 1226-086X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147238 | - |
dc.description.abstract | Nickel sulfide (NiSx) was grown by atomic layer infiltration using bis(dimethylamino-2-methyl-2-butoxo)nickel(II) [Ni(dmamb)(2)] and hydrogen sulfide (H2S) as a metal precursor and a sulfur source. The steady-state growth rate of the film was 3.7 angstrom/cycles at 160-190 degrees C which was much faster compared to those by conventional atomic layer deposition method (<0.7 angstrom/cycles). This nickel sulfide thin films were characterized by taking X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, and hall measurements. The deposited films on Si wafer was single-phase polycrystalline with multiple domains. The NiSx film grown on fluorine-doped tin oxide (FPO)-coated glass was applied to a counter electrode in dye-sensitized solar cells, which performed a high catalytic activity for the reduction of I-3(-) to I- and the comparable cell efficiency of 7.12% with cells using conventional Pt-coated FPO counter electrode. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE INC | - |
dc.title | Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1016/j.jiec.2019.05.013 | - |
dc.identifier.scopusid | 2-s2.0-85066078972 | - |
dc.identifier.wosid | 000473376600049 | - |
dc.identifier.bibliographicCitation | JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.77, pp.470 - 476 | - |
dc.relation.isPartOf | JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY | - |
dc.citation.title | JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY | - |
dc.citation.volume | 77 | - |
dc.citation.startPage | 470 | - |
dc.citation.endPage | 476 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002510098 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.subject.keywordPlus | NICKEL SULFIDE FILMS | - |
dc.subject.keywordPlus | LOW-COST | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordAuthor | Atomic layer infiltration | - |
dc.subject.keywordAuthor | Nickel sulfide | - |
dc.subject.keywordAuthor | Counter electrode | - |
dc.subject.keywordAuthor | Dye-sensitized solar cell | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1226086X19302333?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.