Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation
- Authors
- Ngoc Thanh Duong; Lee, Juchan; Bang, Seungho; Park, Chulho; Lim, Seong Chu; Jeong, Mun Seok
- Issue Date
- Apr-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- multifunctional heterostructure; multivalued logic; transition-metal dichalcogenides; tunneling diode; van der Waals heterostructure
- Citation
- ACS NANO, v.13, no.4, pp.4478 - 4485
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 13
- Number
- 4
- Start Page
- 4478
- End Page
- 4485
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/147964
- DOI
- 10.1021/acsnano.9b00014
- ISSN
- 1936-0851
- Abstract
- Various functional devices including p-n forward, backward, and Zener diodes are realized with a van der Waals heterostructure that are composed of molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2) by changing the thickness of the MoTe2 layer and common gate bias. In addition, the available negative differential transconductance of the heterostructure is utilized to fabricate a many-valued logic device that exhibits three different logic states (i.e., a ternary inverter). Furthermore, the multivalued logic device can be transformed into a binary inverter using laser irradiation. This work provides a comprehensive understanding of the device fabrication and electronic-device design utilizing thickness control.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.