P-type silicon as hole supplier for nitride-based UVC LEDs
DC Field | Value | Language |
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dc.contributor.author | Cho, Sang June | - |
dc.contributor.author | Liu, Dong | - |
dc.contributor.author | Seo, Jung-Hun | - |
dc.contributor.author | Dalmau, Rafael | - |
dc.contributor.author | Kim, Kwangeun | - |
dc.contributor.author | Park, Jeongpil | - |
dc.contributor.author | Gong, Jiarui | - |
dc.contributor.author | Wang, F | - |
dc.contributor.author | Wang, Fei | - |
dc.contributor.author | Yin, Xin | - |
dc.contributor.author | Jung, Yei Hwan | - |
dc.contributor.author | Lee, In-Kyu | - |
dc.contributor.author | Kim, Munho | - |
dc.contributor.author | Wang, Xudong | - |
dc.contributor.author | Albrechem, John D. | - |
dc.contributor.author | Zhou, Weidong | - |
dc.contributor.author | Moody, Baxter | - |
dc.contributor.author | Ma, Zhenqiang | - |
dc.date.accessioned | 2022-07-10T09:39:36Z | - |
dc.date.available | 2022-07-10T09:39:36Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 1367-2630 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/148299 | - |
dc.description.abstract | The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composition increases for achieving shorter wavelengths (e.g. <280 nm) into the UVC spectral range, the p-type doping issue, which causes very inefficient hole injection, becomes more severe than ever. In this work, we report the detailed study of using p-type Si as a hole supplier for high-Al composition UVC LEDs. We first describe the method of Si/GaN junction formation, where the lattice-mismatch challenge between Si and GaN is overcome by using a 0.5 nm thick Al2O3 layer at the interface. This serves as a physical separation layer between the two materials as well as a passivation, tunneling, and thermal buffer layer. High-resolution transmission electron microscope image illustrates the high-quality interface between Si and GaN. We further detail the hole transport mechanism of the p-p Si/GaN isotype junction through both simulations and experiments. The enhanced hole concentration in the AlGaN/AlN multiple quantum wells (MQWs) due to the use of p-type Si as the hole supplier is verified through comparison with conventional UVC LEDs. Finally, high-performance UVC LEDs made with AlN/AlGaN (Al: 72%) MQWs employing p-type Si as their hole suppliers are demonstrated experimentally to serve as an example of the novel hole injector strategy. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | P-type silicon as hole supplier for nitride-based UVC LEDs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jung, Yei Hwan | - |
dc.identifier.doi | 10.1088/1367-2630/ab0445 | - |
dc.identifier.wosid | 000460063200006 | - |
dc.identifier.bibliographicCitation | NEW JOURNAL OF PHYSICS, v.21, pp.1 - 10 | - |
dc.relation.isPartOf | NEW JOURNAL OF PHYSICS | - |
dc.citation.title | NEW JOURNAL OF PHYSICS | - |
dc.citation.volume | 21 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | POLARIZATION-FIELDS | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | ALGAN/GAN | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | tunneling | - |
dc.subject.keywordAuthor | single crystal nanomembrane | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | transfer printing | - |
dc.subject.keywordAuthor | hole injector | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1367-2630/ab0445 | - |
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