Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Chulho | - |
dc.contributor.author | Duong, Ngoc Thanh | - |
dc.contributor.author | Bang, Seungho | - |
dc.contributor.author | Nguyen, Duc Anh | - |
dc.contributor.author | Oh, Hye Min | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.date.accessioned | 2022-07-10T22:57:47Z | - |
dc.date.available | 2022-07-10T22:57:47Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2018-11 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/148990 | - |
dc.description.abstract | Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regimes. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms - direct tunneling, Fowler-Nordheim tunneling, and the space charge region - depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (approximate to 0.56), power conversion (approximate to 1.5%), and external quantum efficiency (approximate to 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1039/C8NR07219A | - |
dc.identifier.scopusid | 2-s2.0-85056301303 | - |
dc.identifier.wosid | 000451762800024 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.10, no.43, pp.20306 - 20312 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 10 | - |
dc.citation.number | 43 | - |
dc.citation.startPage | 20306 | - |
dc.citation.endPage | 20312 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH RESPONSIVITY | - |
dc.subject.keywordPlus | MOLYBDENUM | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | SCALE | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2018/NR/C8NR07219A | - |
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