Fabrication of the tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane charge transfer complex with high crystallinity by eutectic melting method
DC Field | Value | Language |
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dc.contributor.author | Kim, Jueun | - |
dc.contributor.author | Kang, Youngjong | - |
dc.contributor.author | Lee, Jaejong | - |
dc.date.accessioned | 2022-07-11T17:21:45Z | - |
dc.date.available | 2022-07-11T17:21:45Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/149938 | - |
dc.description.abstract | We show that high crystallinity and charge transporting gain can be obtained in a noble donor-acceptor system (CT complex) composed of organic complex: tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (TTF-F4TCNQ). The complex is small-gap organic metallic or semiconductor (less than 1 eV), and we predict having a high conductivity. We perform an approach to fabricate organic CT complex with high crystallinity by eutectic melting method. Our process is simple and shows crystal growth with improved crystallinity when combined with soft-lithography. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Fabrication of the tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane charge transfer complex with high crystallinity by eutectic melting method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Youngjong | - |
dc.identifier.doi | 10.7567/JJAP.57.06HD01 | - |
dc.identifier.scopusid | 2-s2.0-85047894989 | - |
dc.identifier.wosid | 000439396400015 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 57 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PHYSICAL VAPOR GROWTH | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | TCNQ | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.57.06HD01 | - |
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