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Fabrication of the tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane charge transfer complex with high crystallinity by eutectic melting method

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dc.contributor.authorKim, Jueun-
dc.contributor.authorKang, Youngjong-
dc.contributor.authorLee, Jaejong-
dc.date.accessioned2022-07-11T17:21:45Z-
dc.date.available2022-07-11T17:21:45Z-
dc.date.created2021-05-12-
dc.date.issued2018-06-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/149938-
dc.description.abstractWe show that high crystallinity and charge transporting gain can be obtained in a noble donor-acceptor system (CT complex) composed of organic complex: tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (TTF-F4TCNQ). The complex is small-gap organic metallic or semiconductor (less than 1 eV), and we predict having a high conductivity. We perform an approach to fabricate organic CT complex with high crystallinity by eutectic melting method. Our process is simple and shows crystal growth with improved crystallinity when combined with soft-lithography.-
dc.language영어-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.titleFabrication of the tetrathiafulvalene-2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane charge transfer complex with high crystallinity by eutectic melting method-
dc.typeArticle-
dc.contributor.affiliatedAuthorKang, Youngjong-
dc.identifier.doi10.7567/JJAP.57.06HD01-
dc.identifier.scopusid2-s2.0-85047894989-
dc.identifier.wosid000439396400015-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.6-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume57-
dc.citation.number6-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPHYSICAL VAPOR GROWTH-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusTCNQ-
dc.identifier.urlhttps://iopscience.iop.org/article/10.7567/JJAP.57.06HD01-
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