Compliance-Free Multileveled Resistive Switching in a Transparent 2D Perovskite for Neuromorphic Computing
DC Field | Value | Language |
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dc.contributor.author | Kumar, Mohit | - |
dc.contributor.author | Kim, Hong-Sik | - |
dc.contributor.author | Park, Dae Young | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.contributor.author | Kim, Joondong | - |
dc.date.accessioned | 2022-07-12T07:35:23Z | - |
dc.date.available | 2022-07-12T07:35:23Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/150371 | - |
dc.description.abstract | We demonstrate the pulsed voltage tunable multileveled resistive switching (RS) across a promising transparent energy material of (C4H9NH3)2PbBr4. The X-ray diffraction and scanning electron microscopy results confirm the growth of (001) plane-orientated nanostructures of (C4H9NH3)2PbBr4 with an average size of ∼360 nm. The device depicts optical transmittance higher than 70% in the visible region and efficient absorbance in the ultraviolet region. The current–voltage measurement shows the bipolar RS. In addition, depending on the magnitude of applied electric pulse, the current across the device can be flipped in four different levels, which remain stable for long time, indicating multimode RS. Further, the current across the device increases gradually by applying continuous pulses, similar to the biological synapses. The observed results are attributed to the electric field-induced ionic migration across the (C4H9NH3)2PbBr4. The existing study should open a new avenue to apply this promising energy material of perovskite for multifunctional advanced devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Compliance-Free Multileveled Resistive Switching in a Transparent 2D Perovskite for Neuromorphic Computing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1021/acsami.7b19406 | - |
dc.identifier.scopusid | 2-s2.0-85045756571 | - |
dc.identifier.wosid | 000430642100068 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, pp.12768 - 12772 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.startPage | 12768 | - |
dc.citation.endPage | 12772 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | HALIDE PEROVSKITES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | transparent | - |
dc.subject.keywordAuthor | perovskite energy material | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | multilevel | - |
dc.subject.keywordAuthor | neuromorphic | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.7b19406 | - |
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