The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Young-Taek | - |
dc.contributor.author | Sim, Jae-Min | - |
dc.contributor.author | Kino, Hisashi | - |
dc.contributor.author | Kim, Deok-Kee | - |
dc.contributor.author | Tanaka, Tetsu | - |
dc.contributor.author | Song, Yun Heub | - |
dc.date.accessioned | 2021-08-02T12:27:00Z | - |
dc.date.available | 2021-08-02T12:27:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15045 | - |
dc.description.abstract | The effect of residual stress during the tungsten deposition process were investigated using metal-oxide-nitride-oxide-semiconductor (MONOS) devices. The variation of residual stress due to tungsten volume was measured under tensile and compressive stress conditions. Residual stress increased in proportion to the deposition volume. Stress influenced the Si/SiO2 interface and caused deterioration of the electrical properties, which was experimentally observed during measurements of the interface trap densities and memory windows. We confirmed that residual stress led to degradation of the cell characteristics of MONOS devices, and the absolute value of stress significantly affected these issues regardless of the polarity. From our experiments results, we can predict the degradation of cell characteristics in memory devices, and confirm the need for appropriate stress control in manufacturing process. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1109/JEDS.2019.2901298 | - |
dc.identifier.scopusid | 2-s2.0-85062985548 | - |
dc.identifier.wosid | 000460753000054 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.382 - 387 | - |
dc.relation.isPartOf | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.citation.title | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 382 | - |
dc.citation.endPage | 387 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MECHANICAL-STRESS | - |
dc.subject.keywordAuthor | Residual stress | - |
dc.subject.keywordAuthor | tungsten volume | - |
dc.subject.keywordAuthor | curvature method | - |
dc.subject.keywordAuthor | interface trap densities | - |
dc.subject.keywordAuthor | MONOS structure | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8651629 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.