Room temperature ferromagnetic and semiconducting properties of graphene adsorbed with cobalt oxide using electrochemical method

Abstract

We report the room temperature ferromagnetic properties of graphene adsorbed by cobalt oxide using electrochemical method. The cobalt oxide doping onto graphene was carried out in 0.1 M LiCoO2/DIwater solution. The doped graphene thin film was determined to be a single layer from Raman analysis. The CoO doped graphene has a clear ferromagnetic hysteresis at room temperature and showed a remnant magnetization, 128.2 emu/cm(3). The temperature dependent conductivity of the adsorbed graphene showed the semiconducting behavior and a band gap opening of 0.12 eV.