Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jong Yun | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Jeong Won | - |
dc.contributor.author | Yoon, Tae Hyun | - |
dc.contributor.author | Choi, Sung-Yool | - |
dc.date.accessioned | 2022-07-13T00:48:40Z | - |
dc.date.available | 2022-07-13T00:48:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151322 | - |
dc.description.abstract | The role of top interface layer in bipolar resistive switching (BRS) behaviors of Al/PEDOT:PSS/Al memory devices was investigated via comparison with the Au/PEDOT:PSS/Al system. The IeV characteristic curves of device with a PEDOT:PSS layer sandwiched between two Al electrodes displayed bipolar resistive switching characteristics, while the device with Au top electrode showed a permanent breakdown in forming process. HRTEM and in-situ XPS observation demonstrated that the Al top electrode reacted with oxygen and sulfur of PSS chain and produced Al-O-S layers, whereas Au top electrode did not reacted to form these types of interfacial layers. These results have confirmed the critical role of Al top electrode with the strong reactivity with a PEDOT: PSS organic layer in the bipolar resistive switching behaviors, which seems to closely related with the presence of electron trap sites at the interface between the top electrode and organic active layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Tae Hyun | - |
dc.identifier.doi | 10.1016/j.cap.2010.12.038 | - |
dc.identifier.scopusid | 2-s2.0-79960921411 | - |
dc.identifier.wosid | 000294208600009 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.2, pp.E35 - E39 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | E35 | - |
dc.citation.endPage | E39 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Conducting polymers | - |
dc.subject.keywordPlus | Sulfur | - |
dc.subject.keywordPlus | Switching | - |
dc.subject.keywordPlus | Switching systems | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Gold | - |
dc.subject.keywordPlus | Al electrode | - |
dc.subject.keywordPlus | Forming process | - |
dc.subject.keywordPlus | I-V characteristic curve | - |
dc.subject.keywordPlus | In-situ | - |
dc.subject.keywordPlus | In-situ XPS | - |
dc.subject.keywordPlus | Interface layer | - |
dc.subject.keywordPlus | Interfacial layer | - |
dc.subject.keywordPlus | Memory device | - |
dc.subject.keywordPlus | Organic active layers | - |
dc.subject.keywordPlus | Organic layers | - |
dc.subject.keywordPlus | PEDOT:PSS | - |
dc.subject.keywordPlus | Permanent breakdown | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Resistive switching behaviors | - |
dc.subject.keywordAuthor | PEDOT:PSS | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | In-situ XPS | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Memory device | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173911000290?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.