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One-step micropatterning of highly-ordered semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) films by a selective shear and detachment process

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dc.contributor.authorChang, Jiyoun-
dc.contributor.authorJung, Hee Joon-
dc.contributor.authorJeong, Huisu-
dc.contributor.authorPark, Youn Jung-
dc.contributor.authorSung, Jinwoo-
dc.contributor.authorKang, Seok Ju-
dc.contributor.authorJung, Gun Young-
dc.contributor.authorSung, Myung M.-
dc.contributor.authorPark, Cheolmin-
dc.date.accessioned2022-07-13T00:53:36Z-
dc.date.available2022-07-13T00:53:36Z-
dc.date.created2021-05-12-
dc.date.issued2011-01-
dc.identifier.issn1566-1199-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151339-
dc.description.abstractWe present a one-step route for micropatterning a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film with both molecular and microstructural crystal control over a large area. The method is based on the static mechanical shearing and ;subsequent detachment of a film spin coated on pre-patterned Al which has been lithographically prepared on a SiO2 substrate under appropriate thermal conditions. Selective detachment of the film in contact with the SiO2 substrate gave rise to micropatterns of PVDF-TrFE film positioned only on the Al regions. Further, the PVDF-TrFE film showed 25-nm-thick crystalline lamellae aligned perpendicular to the shear direction, wherein the c axis of the crystals was globally ordered parallel to the shear direction. The sheared and patterned PVDF-TrFE thin films are readily incorporated into non-volatile memory units of metal/ferroelectric/metal capacitors and bottom gate-top contact field effect transistors, leading to arrays of memory devices with enhanced performance.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER-
dc.titleOne-step micropatterning of highly-ordered semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) films by a selective shear and detachment process-
dc.typeArticle-
dc.contributor.affiliatedAuthorSung, Myung M.-
dc.identifier.doi10.1016/j.orgel.2010.10.007-
dc.identifier.scopusid2-s2.0-78349283108-
dc.identifier.wosid000285684600015-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.12, no.1, pp.98 - 107-
dc.relation.isPartOfORGANIC ELECTRONICS-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume12-
dc.citation.number1-
dc.citation.startPage98-
dc.citation.endPage107-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusFLUORIDE)-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMEMORIES-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordAuthorFerroelectric polymer-
dc.subject.keywordAuthorStatic shear-
dc.subject.keywordAuthorDetachment-
dc.subject.keywordAuthorMicropattern-
dc.subject.keywordAuthorCrystal orientation-
dc.subject.keywordAuthorNon-volatile memory-
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S1566119910003319?via%3Dihub-
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