Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111) Surfaces
DC Field | Value | Language |
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dc.contributor.author | Zhang, Hui | - |
dc.contributor.author | Choi, Jin-Ho | - |
dc.contributor.author | Xu, Yang | - |
dc.contributor.author | Wang, Xiuxia | - |
dc.contributor.author | Zhai, Xiaofang | - |
dc.contributor.author | Wang, Bing | - |
dc.contributor.author | Zeng, Changgan | - |
dc.contributor.author | Cho, Jun-Hyung | - |
dc.contributor.author | Zhang, Zhenyu | - |
dc.contributor.author | Hou, J. G. | - |
dc.date.accessioned | 2022-07-13T00:55:58Z | - |
dc.date.available | 2022-07-13T00:55:58Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151347 | - |
dc.description.abstract | Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be similar to 60 meV, smaller than one-half of the band gap of similar to 200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111) Surfaces | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Jun-Hyung | - |
dc.identifier.doi | 10.1103/PhysRevLett.106.026801 | - |
dc.identifier.scopusid | 2-s2.0-78651423301 | - |
dc.identifier.wosid | 000286745400006 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW LETTERS, v.106, no.2, pp.1 - 4 | - |
dc.relation.isPartOf | PHYSICAL REVIEW LETTERS | - |
dc.citation.title | PHYSICAL REVIEW LETTERS | - |
dc.citation.volume | 106 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | QUANTUM CHAINS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MIGRATION | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | WAVE | - |
dc.identifier.url | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.106.026801 | - |
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