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Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

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dc.contributor.authorPak, Sang Woo-
dc.contributor.authorChu, Dongil-
dc.contributor.authorSong, Da Ye-
dc.contributor.authorLee, Seung Kyo-
dc.contributor.authorKim, Eun Kyu-
dc.date.accessioned2022-07-13T04:24:07Z-
dc.date.available2022-07-13T04:24:07Z-
dc.date.issued2017-11-
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151376-
dc.description.abstractWe report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (alpha-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS2) flakes. The electrical characteristics of the alpha-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm(2) V-1 s(-1) and current on/off ratio up to 10(7). By taking advantages of the high quality alpha-IGZO and MoS2 light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range. The alpha-IGZO channel detector capped by MoS2 show a photo-responsivity of approximately 14.9 mAW(-1) at 1100 nm wavelength, which is five times higher than of the alpha-IGZO device without MoS2 layer.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Physics Publishing-
dc.titleEnhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1088/1361-6528/aa9054-
dc.identifier.scopusid2-s2.0-85033667913-
dc.identifier.wosid000414173200005-
dc.identifier.bibliographicCitationNanotechnology, v.28, no.47, pp 1 - 6-
dc.citation.titleNanotechnology-
dc.citation.volume28-
dc.citation.number47-
dc.citation.startPage1-
dc.citation.endPage6-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusPHOTOTRANSISTORS-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordAuthorInGaZnO-
dc.subject.keywordAuthorthin film transistor-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorphotoresponsivity-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/1361-6528/aa9054-
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