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Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pak, Sang Woo | - |
| dc.contributor.author | Chu, Dongil | - |
| dc.contributor.author | Song, Da Ye | - |
| dc.contributor.author | Lee, Seung Kyo | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.date.accessioned | 2022-07-13T04:24:07Z | - |
| dc.date.available | 2022-07-13T04:24:07Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2017-11 | - |
| dc.identifier.issn | 0957-4484 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151376 | - |
| dc.description.abstract | We report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (alpha-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS2) flakes. The electrical characteristics of the alpha-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm(2) V-1 s(-1) and current on/off ratio up to 10(7). By taking advantages of the high quality alpha-IGZO and MoS2 light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range. The alpha-IGZO channel detector capped by MoS2 show a photo-responsivity of approximately 14.9 mAW(-1) at 1100 nm wavelength, which is five times higher than of the alpha-IGZO device without MoS2 layer. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
| dc.identifier.doi | 10.1088/1361-6528/aa9054 | - |
| dc.identifier.scopusid | 2-s2.0-85033667913 | - |
| dc.identifier.wosid | 000414173200005 | - |
| dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.28, no.47, pp.1 - 6 | - |
| dc.relation.isPartOf | NANOTECHNOLOGY | - |
| dc.citation.title | NANOTECHNOLOGY | - |
| dc.citation.volume | 28 | - |
| dc.citation.number | 47 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | OXIDE | - |
| dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
| dc.subject.keywordPlus | PHOTODETECTORS | - |
| dc.subject.keywordAuthor | InGaZnO | - |
| dc.subject.keywordAuthor | thin film transistor | - |
| dc.subject.keywordAuthor | MoS2 | - |
| dc.subject.keywordAuthor | photoresponsivity | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/aa9054 | - |
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