Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mun, Seohyun | - |
dc.contributor.author | Park, Yoonkyung | - |
dc.contributor.author | Lee, Yong-Eun Koo | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-13T04:28:21Z | - |
dc.date.available | 2022-07-13T04:28:21Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 0743-7463 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151381 | - |
dc.description.abstract | A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1021/acs.langmuir.7b02466 | - |
dc.identifier.scopusid | 2-s2.0-85035319171 | - |
dc.identifier.wosid | 000423779100011 | - |
dc.identifier.bibliographicCitation | LANGMUIR, v.33, no.47, pp.13554 - 13560 | - |
dc.relation.isPartOf | LANGMUIR | - |
dc.citation.title | LANGMUIR | - |
dc.citation.volume | 33 | - |
dc.citation.number | 47 | - |
dc.citation.startPage | 13554 | - |
dc.citation.endPage | 13560 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FILM | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acs.langmuir.7b02466 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.