Electrical Properties of Thin Film Transistors with Zinc Tin Oxide Channel Layer
DC Field | Value | Language |
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dc.contributor.author | Hong, Seunghwan | - |
dc.contributor.author | Oh, Gyujin | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-13T05:02:28Z | - |
dc.date.available | 2022-07-13T05:02:28Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/151505 | - |
dc.description.abstract | We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 degrees C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm(2) /V.s, specific resistivity of about 2 x 10(2) Omega.cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm 2 /V u s and on-off ratio (I-on/I-off) of 10 4 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 degrees C. This result showed that ZTO film is promising on application to a high performance transparent TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical Properties of Thin Film Transistors with Zinc Tin Oxide Channel Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.71.500 | - |
dc.identifier.scopusid | 2-s2.0-85031497728 | - |
dc.identifier.wosid | 000412850800010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.71, no.8, pp.500 - 505 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 71 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 500 | - |
dc.citation.endPage | 505 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002274828 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | INDIUM OXIDE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | STOICHIOMETRY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | ZN2SNO4 | - |
dc.subject.keywordPlus | TARGET | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Zinc tin oxide (ZTO) | - |
dc.subject.keywordAuthor | UHV RF sputter | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.71.500 | - |
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