Electrical Properties of Thin Film Transistors with Zinc Tin Oxide Channel Layer

Abstract

We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO2, which applied power for SnO2 target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 degrees C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm(2) /V.s, specific resistivity of about 2 x 10(2) Omega.cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm 2 /V u s and on-off ratio (I-on/I-off) of 10 4 was obtained from the films grown with SnO2 target power of 25 W and post-annealed at 450 degrees C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.