Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Abstract

Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 x 10(-4) Omega cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 x 10(-4) emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.