Solid-phase epitaxial growth of an alumina layer having a stacking-mismatched domain structure of the intermediate γ-phase
DC Field | Value | Language |
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dc.contributor.author | Jang, Jeonghwan | - |
dc.contributor.author | Lee, Seung Yong | - |
dc.contributor.author | Park, Hwanyeol | - |
dc.contributor.author | Yoon, Sangmoon | - |
dc.contributor.author | Park, Gyeong-Su | - |
dc.contributor.author | Lee, Gun-Do | - |
dc.contributor.author | Park, Yongjo | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2021-08-02T12:29:23Z | - |
dc.date.available | 2021-08-02T12:29:23Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15214 | - |
dc.description.abstract | Solid-phase epitaxy (SPE), a solid-state phase transition of materials from an amorphous to a crystalline phase, is a convenient crystal growing technique. In particular, SPE can be used to grow α-Al₂O₃ epitaxially with a novel structure that provides an effective substrate for improved performance of light-emitting diodes (LEDs). However, the inevitable two-step phase transformation through the γ-Al₂O₃ phase hinders the expected improved crystallinity of α-Al₂O₃ , and thereby further enhancement of LED performance. Herein, we provide a fundamental understanding of the SPE growth mechanism from amorphous to metastable γ-Al₂O₃ using transmission electron microscopy (TEM) and density functional theory (DFT) calculations. The nanobeam precession electron diffraction technique enabled clear visualization of the double-positioning domain distribution in the SPE γ-Al₂O₃ film and emphasized the need for careful selection of the viewing directions for any investigation of double-positioning domains. Void and stacking fault defects further investigated by high-resolution scanning TEM (STEM) analyses revealed how double-positioning domains and other SPE growth behaviors directly influence the crystallinity of SPE films. Additionally, DFT calculations revealed the origins of SPE growth behavior. The double-positioning γ-Al₂O₃ domains randomly nucleate from the α-Al₂O₃ substrate regardless of the α-Al₂O₃ termination layer, but the large energy requirement for reversal of the γ-Al₂O₃ stacking sequence prevents it from switching the domain type during the crystal growth. We expect that this study will be useful to improve the crystallinity of SPE γ- and α-Al₂O₃ films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Solid-phase epitaxial growth of an alumina layer having a stacking-mismatched domain structure of the intermediate γ-phase | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seung Yong | - |
dc.identifier.doi | 10.1021/acsami.8b13818 | - |
dc.identifier.scopusid | 2-s2.0-85057830582 | - |
dc.identifier.wosid | 000452694100059 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.48 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 48 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | DOUBLE-POSITIONING BOUNDARIES | - |
dc.subject.keywordPlus | AMORPHOUS-TO-GAMMA | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | TRANSFORMATIONS | - |
dc.subject.keywordPlus | GAMMA-AL2O3 | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | solid-phase epitaxy | - |
dc.subject.keywordAuthor | aluminum oxide | - |
dc.subject.keywordAuthor | double-positioning domains | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | density functional theory calculations | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.8b13818 | - |
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