Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Kim, Hongki | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T12:29:57Z | - |
dc.date.available | 2021-08-02T12:29:57Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15261 | - |
dc.description.abstract | IIn this study, Au/Ni/TaOx/NiSi and Au/Ni/TaON/NiSi electrochemical metallization memory devices are fabricated and their resistive switching (RS) behavior is investigated. The composition of TaON is controlled by changing the N partial pressure during sputtering. The Au/Ni/TaOx/NiSi device does not function as a memory device, whereas the Au/Ni/TaON/NiSi devices show conventional ECM characteristics. In addition, the device with the highest N concentration among those fabricate exhibites the best RS characteristics, with a constant high-resistance-state (HRS) current level and stable retention properties over 5 x 10(4) s, due to the formation of strong Ni conductive filaments (CFs). The TaON film with the highest N concentration has the lowest defect density, allowing stable Ni CFs to form and thereby yielding superior device performance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1002/pssa.201800181 | - |
dc.identifier.scopusid | 2-s2.0-85052487821 | - |
dc.identifier.wosid | 000452297400001 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.215, no.23 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 215 | - |
dc.citation.number | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics | - |
dc.relation.journalWebOfScienceCategory | Applied | - |
dc.relation.journalWebOfScienceCategory | Physics | - |
dc.relation.journalWebOfScienceCategory | Condensed Matter | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | conductive filaments | - |
dc.subject.keywordAuthor | electrochemical metallization memory | - |
dc.subject.keywordAuthor | Ni | - |
dc.subject.keywordAuthor | TaOn | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssa.201800181 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.