Dually crosslinkable SiO2@polysiloxane core-shell nanoparticles for flexible gate dielectric insulators
DC Field | Value | Language |
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dc.contributor.author | Lee, Eunkyung | - |
dc.contributor.author | Jung, Jiyoung | - |
dc.contributor.author | Choi, Ajeong | - |
dc.contributor.author | Bulliard, Xavier | - |
dc.contributor.author | Kim, Jung-Hwa | - |
dc.contributor.author | Yun, Youngjun | - |
dc.contributor.author | Kim, Jooyoung | - |
dc.contributor.author | Park, Jeongil | - |
dc.contributor.author | Lee, Sangyoon | - |
dc.contributor.author | Kang, Youngjong | - |
dc.date.accessioned | 2022-07-14T12:31:49Z | - |
dc.date.available | 2022-07-14T12:31:49Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/152735 | - |
dc.description.abstract | A hybrid gate dielectric material for flexible OTFT is developed by using core-shell nanoparticles (SiO2@PSRXL) where the core and the shell consist of silica nanoparticles and polysiloxane resin, respectively. Since polysiloxane resin contains both thermal-and photo-crosslinkable functional groups, densely-crosslinked thin gate dielectric films can be easily prepared on various substrates by conventional solution casting followed by dual crosslinking. SiO2@PSRXL films exhibit high thermal stability (weight loss at 300 degrees C is smaller than 3 wt%). The dielectric films made of SiO2@PSRXL show an exceptionally low leakage current and no breakdown voltage up to 4.3 MV cm(-1), which are comparable to those of silica dielectrics prepared by CVD. OTFT devices based on dibenzothiopheno[6,5-b: 6',5'-f] thieno[3,2-b] thiophene (DTBTT) as a semiconductor and SiO2@PSRXL as a gate dielectric exhibit good hole mobility (2.5 cm(2) V-1 s(-1)) and I-on/I-off ratio (10(6)). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Dually crosslinkable SiO2@polysiloxane core-shell nanoparticles for flexible gate dielectric insulators | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Youngjong | - |
dc.identifier.doi | 10.1039/c6ra28230j | - |
dc.identifier.scopusid | 2-s2.0-85016105052 | - |
dc.identifier.wosid | 000399005200036 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.7, no.29, pp.17841 - 17847 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 7 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 17841 | - |
dc.citation.endPage | 17847 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | NANOCOMPOSITE | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | BREAKDOWN | - |
dc.subject.keywordPlus | DESIGN | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2017/RA/C6RA28230J | - |
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