Stacking-sequence-independent band structure and shear exfoliation of two-dimensional electride materials
- Authors
- Yi, Seho; Choi, Jin-Ho; Lee, Kimoon; Kim, Sung Wng; Park, Chul Hong; Cho, Jun-Hyung
- Issue Date
- Dec-2016
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.94, no.23, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 94
- Number
- 23
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/153482
- DOI
- 10.1103/PhysRevB.94.235428
- ISSN
- 2469-9950
- Abstract
- The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect to their stacking configurations. Here, based on first-principles density-functional theory calculations, we demonstrate that the band structure of the recently synthesized 2D Ca2N electride changes little for the stacking sequence as well as the lateral interlayer shift. This intriguing invariance of band structure with respect to geometrical variations can be attributed to a complete screening of [Ca2N](+) cationic layers by anionic excess electrons delocalized between the cationic layers. The resulting weak interactions between 2D dressed cationic layers give rise to not only a shallow potential barrier for bilayer sliding but also an electron-doping-facilitated shear exfoliation. Our findings open a route for exploration of the peculiar geometry-insensitive electronic properties in 2D electride materials, which will be useful for future thermally stable electronic applications.
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