Location-Controlled Growth of Vertically Aligned Si Nanowires using Au Nanodisks Patterned by KrF Stepper Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Yi-Seul | - |
dc.contributor.author | Lee, Jin Seok | - |
dc.date.accessioned | 2022-07-15T14:14:54Z | - |
dc.date.available | 2022-07-15T14:14:54Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.issn | 1861-4728 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/154269 | - |
dc.description.abstract | The location-controlled epitaxial growth of vertically aligned Si nanowire (v-SiNW) arrays over large surface area was investigated with Au nanodisks (AuNDs) patterned by KrF stepper lithography. There are two steps for synthesizing v-SiNWs from an AuND pattern: annealing and growth. The annealing process induces the formation of a single Au nanoparticle (AuNP) from an AuND pattern, which consists of several cracked AuNPs. Here, the oxide layer between the AuNDs and Si substrate is necessary for impeding the diffusion of Si atoms into the AuNPs. However, the oxide layer must be removed for properly aligned epitaxial SiNW growth. These SiNW arrays in large area can contribute highly to improve a nanowire-based engineering by controlling the location of SiNWs with consistent pitch. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Location-Controlled Growth of Vertically Aligned Si Nanowires using Au Nanodisks Patterned by KrF Stepper Lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jin Seok | - |
dc.identifier.doi | 10.1002/asia.201600560 | - |
dc.identifier.scopusid | 2-s2.0-84976582127 | - |
dc.identifier.wosid | 000379926000002 | - |
dc.identifier.bibliographicCitation | CHEMISTRY-AN ASIAN JOURNAL, v.11, no.13, pp.1878 - 1882 | - |
dc.relation.isPartOf | CHEMISTRY-AN ASIAN JOURNAL | - |
dc.citation.title | CHEMISTRY-AN ASIAN JOURNAL | - |
dc.citation.volume | 11 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 1878 | - |
dc.citation.endPage | 1882 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | location-controlled growth | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | stepper lithography | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/asia.201600560 | - |
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