A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Han, Kyu Seok | - |
dc.contributor.author | Kalode, Pranav Y. | - |
dc.contributor.author | Lee, Yong-Eun Koo | - |
dc.contributor.author | Kim, Hongbum | - |
dc.contributor.author | Lee, Lynn | - |
dc.contributor.author | Sung, Myung Mo | - |
dc.date.accessioned | 2022-07-15T18:09:38Z | - |
dc.date.available | 2022-07-15T18:09:38Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/154989 | - |
dc.description.abstract | Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Myung Mo | - |
dc.identifier.doi | 10.1039/c5nr08016a | - |
dc.identifier.scopusid | 2-s2.0-84959377944 | - |
dc.identifier.wosid | 000371479000023 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.8, no.9, pp.5000 - 5005 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 8 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 5000 | - |
dc.citation.endPage | 5005 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | CVD-GROWN GRAPHENE | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | AIR-STABILITY | - |
dc.subject.keywordPlus | DIRAC POINT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | BINDING | - |
dc.subject.keywordPlus | FILMS | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2016/NR/C5NR08016A | - |
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