Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Mira | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Park, Teahee | - |
dc.contributor.author | Lee, Junyoung | - |
dc.contributor.author | Yang, Jonghee | - |
dc.contributor.author | Yi, Whikun | - |
dc.date.accessioned | 2022-07-15T18:12:11Z | - |
dc.date.available | 2022-07-15T18:12:11Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155019 | - |
dc.description.abstract | We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 mu m by changing the texturing process parameters, i. e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yi, Whikun | - |
dc.identifier.doi | 10.1166/jnn.2016.11087 | - |
dc.identifier.scopusid | 2-s2.0-84960380550 | - |
dc.identifier.wosid | 000374153800141 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.3, pp.2992 - 2995 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 2992 | - |
dc.citation.endPage | 2995 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SEPARATION | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | DIAMETER | - |
dc.subject.keywordAuthor | Selective Growth | - |
dc.subject.keywordAuthor | Textured Si Substrate | - |
dc.subject.keywordAuthor | Metallic SWNTs | - |
dc.subject.keywordAuthor | Semiconducting SWNTs | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.