Simultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Silicon
- Authors
- Lim, Jongwoo; Wang, Hung-Ta; Tang, Jinyao; Andrews, Sean C.; So, Hong yun; Lee, Jaeho; Lee, Dong Hyun; Russell, Thomas P.; Yang, Peidong
- Issue Date
- Jan-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- thermoelectrics; silicon nanostructure; holey silicon; phonon transport; thermal conductivity
- Citation
- ACS NANO, v.10, no.1, pp.124 - 132
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 10
- Number
- 1
- Start Page
- 124
- End Page
- 132
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155273
- DOI
- 10.1021/acsnano.5b05385
- ISSN
- 1936-0851
- Abstract
- Block copolymer patterned holey silicon (HS) was successfully integrated into a micro device for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16-34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 x 10(18) to 6.5 x 10(19) cm(-3). At 300 K, thermal conductivity as low as 1.8 +/- 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. The controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.
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