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Electrical Property Variations in Organic Bistable Devices Utilizing CdSe/CdS/ZnS Core-Shell-Shell Nanoparticle Layer Embedded in a Polystyrene Layer Due to an Inserted WO3 Layer

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dc.contributor.authorYou, Chan Ho-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2022-07-15T21:41:55Z-
dc.date.available2022-07-15T21:41:55Z-
dc.date.created2021-05-12-
dc.date.issued2015-08-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156628-
dc.description.abstractOrganic bistable devices (OBDs) based on CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in a polystyrene (PS) layer with an inserted WO3 layer were fabricated by using the spin coating method and the thermal evaporation. The current density voltage (J-V) curves for the Al/CdSe/CdS/ZnS core-shell-shell nanoparticles embedded in PS layer/WO3/ITO devices with different thicknesses of WO3 layers exhibited electrical bistabilities. Simulated J-V curves for the OBDs containing CdSe/CdS/ZnS core shell shell nanoparticles were in reasonable agreement with the experimental results. The simulated J-V characteristics for the OBDs at various trap densities utilizing the double Gaussian distribution showed that the current level decreased with increasing shallow trap density and that the transition voltage increased with increasing deep trap density.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleElectrical Property Variations in Organic Bistable Devices Utilizing CdSe/CdS/ZnS Core-Shell-Shell Nanoparticle Layer Embedded in a Polystyrene Layer Due to an Inserted WO3 Layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1166/jnn.2015.10431-
dc.identifier.scopusid2-s2.0-84920747187-
dc.identifier.wosid000350268100101-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.8, pp.6112 - 6115-
dc.relation.isPartOfJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume15-
dc.citation.number8-
dc.citation.startPage6112-
dc.citation.endPage6115-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusMEMORY CELLS-
dc.subject.keywordPlusNITRIDE-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusDIODES-
dc.subject.keywordAuthorOrganic Bistable Device-
dc.subject.keywordAuthorElectrical Property-
dc.subject.keywordAuthorBistable Characteristics-
dc.subject.keywordAuthorCdSe/CdS/ZnS Core-Shell-Shell Nanoparticle-
dc.subject.keywordAuthorWO3 Layer-
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000008/art00101-
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