Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films
DC Field | Value | Language |
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dc.contributor.author | Oh, Dohyun | - |
dc.contributor.author | Yun, Dong Yeol | - |
dc.contributor.author | Lee, Nam Hyun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-15T22:07:33Z | - |
dc.date.available | 2022-07-15T22:07:33Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156888 | - |
dc.description.abstract | Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn - O, Ga - O, and Sn - O bonds. Current-voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.tsf.2014.12.021 | - |
dc.identifier.scopusid | 2-s2.0-84929162756 | - |
dc.identifier.wosid | 000354118100015 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.587, pp.71 - 74 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 587 | - |
dc.citation.startPage | 71 | - |
dc.citation.endPage | 74 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | Nonvolatile memory devices | - |
dc.subject.keywordAuthor | Gallium zinc tin oxide | - |
dc.subject.keywordAuthor | Solution process | - |
dc.subject.keywordAuthor | Bipolar resistive switching behavior | - |
dc.subject.keywordAuthor | Conduction mechanisms | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609014012802?via%3Dihub | - |
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