Cited 0 time in
Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Takemura, Yasutaka | - |
| dc.contributor.author | Lee, Du-Yeong | - |
| dc.contributor.author | Lee, Seung-Eun | - |
| dc.contributor.author | Chae, Kyo-Suk | - |
| dc.contributor.author | Shim, Tae-Hun | - |
| dc.contributor.author | Lian, Guoda | - |
| dc.contributor.author | Kim, Moon | - |
| dc.contributor.author | Park, Jea-Gun | - |
| dc.date.accessioned | 2022-07-15T23:07:48Z | - |
| dc.date.available | 2022-07-15T23:07:48Z | - |
| dc.date.issued | 2015-05 | - |
| dc.identifier.issn | 0957-4484 | - |
| dc.identifier.issn | 1361-6528 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157350 | - |
| dc.description.abstract | The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Physics Publishing | - |
| dc.title | Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1088/0957-4484/26/19/195702 | - |
| dc.identifier.scopusid | 2-s2.0-84928607775 | - |
| dc.identifier.wosid | 000354539500015 | - |
| dc.identifier.bibliographicCitation | Nanotechnology, v.26, no.19, pp 1 - 9 | - |
| dc.citation.title | Nanotechnology | - |
| dc.citation.volume | 26 | - |
| dc.citation.number | 19 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 9 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | JUNCTIONS | - |
| dc.subject.keywordPlus | DEPENDENCE | - |
| dc.subject.keywordPlus | ANISOTROPY | - |
| dc.subject.keywordPlus | THICKNESS | - |
| dc.subject.keywordPlus | BARRIER | - |
| dc.subject.keywordAuthor | spin transfer torque | - |
| dc.subject.keywordAuthor | magnetic random access memory | - |
| dc.subject.keywordAuthor | magnetic tunnle junctions | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/26/19/195702 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
