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Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer

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dc.contributor.authorTakemura, Yasutaka-
dc.contributor.authorLee, Du-Yeong-
dc.contributor.authorLee, Seung-Eun-
dc.contributor.authorChae, Kyo-Suk-
dc.contributor.authorShim, Tae-Hun-
dc.contributor.authorLian, Guoda-
dc.contributor.authorKim, Moon-
dc.contributor.authorPark, Jea-Gun-
dc.date.accessioned2022-07-15T23:07:48Z-
dc.date.available2022-07-15T23:07:48Z-
dc.date.issued2015-05-
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157350-
dc.description.abstractThe TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Physics Publishing-
dc.titleInfluence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1088/0957-4484/26/19/195702-
dc.identifier.scopusid2-s2.0-84928607775-
dc.identifier.wosid000354539500015-
dc.identifier.bibliographicCitationNanotechnology, v.26, no.19, pp 1 - 9-
dc.citation.titleNanotechnology-
dc.citation.volume26-
dc.citation.number19-
dc.citation.startPage1-
dc.citation.endPage9-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusJUNCTIONS-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusTHICKNESS-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordAuthorspin transfer torque-
dc.subject.keywordAuthormagnetic random access memory-
dc.subject.keywordAuthormagnetic tunnle junctions-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/0957-4484/26/19/195702-
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