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Validation Test of Geant4 Simulation of Electron Backscattering

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dc.contributor.authorKim, Sung Hun-
dc.contributor.authorPia, Maria Grazia-
dc.contributor.authorBasaglia, Tullio-
dc.contributor.authorHan, Min Cheol-
dc.contributor.authorHoff, Gabriela-
dc.contributor.authorKim, Chan Hyeong-
dc.contributor.authorSaracco, Paolo-
dc.date.accessioned2022-07-15T23:37:36Z-
dc.date.available2022-07-15T23:37:36Z-
dc.date.issued2015-04-
dc.identifier.issn0018-9499-
dc.identifier.issn1558-1578-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157588-
dc.description.abstractBackscattering is a sensitive probe of the accuracy of electron scattering algorithms implemented in Monte Carlo codes. The capability of the Geant4 toolkit to describe realistically the fraction of electrons backscattered from a target volume is extensively and quantitatively evaluated in comparison with experimental data retrieved from the literature. The validation test covers the energy range between approximately 100 eV and 20 MeV, and concerns a wide set of target elements. Multiple and single electron scattering models implemented in Geant4, as well as preassembled selections of physics models distributed within Geant4, are analyzed with statistical methods. The evaluations concern Geant4 versions from 9.1 to 10.1. Significant evolutions are observed over the range of Geant4 versions, not always in the direction of better compatibility with experiment. Goodness-of-fit tests complemented by categorical analysis tests identify a configuration based on Geant4 Urban multiple scattering model in Geant4 version 9.1 and a configuration based on single Coulomb scattering in Geant4 10.0 as the physics options best reproducing experimental data above a few tens of keV. At lower energies only single scattering demonstrates some capability to reproduce data down to a few keV. Recommended preassembled physics configurations appear incapable of describing electron backscattering compatible with experiment. With the support of statistical methods, a correlation is established between the validation of Geant4-based simulation of backscattering and of energy deposition.-
dc.format.extent29-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleValidation Test of Geant4 Simulation of Electron Backscattering-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TNS.2015.2401055-
dc.identifier.scopusid2-s2.0-85027922436-
dc.identifier.wosid000352887500008-
dc.identifier.bibliographicCitationIEEE Transactions on Nuclear Science, v.62, no.2, pp 451 - 479-
dc.citation.titleIEEE Transactions on Nuclear Science-
dc.citation.volume62-
dc.citation.number2-
dc.citation.startPage451-
dc.citation.endPage479-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.subject.keywordPlusMONTE-CARLO-SIMULATION-
dc.subject.keywordPlusMULTIPLE-SCATTERING-
dc.subject.keywordPlusENERGY-RANGE-
dc.subject.keywordPlusCOEFFICIENT-
dc.subject.keywordPlusTRANSMISSION-
dc.subject.keywordPlusPOWER-
dc.subject.keywordPlusPENETRATION-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusTARGETS-
dc.subject.keywordPlusSOLIDS-
dc.subject.keywordAuthorElectrons-
dc.subject.keywordAuthorGeant4-
dc.subject.keywordAuthorMonte Carlo-
dc.subject.keywordAuthorsimulation-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7065332-
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