Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure
DC Field | Value | Language |
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dc.contributor.author | Roh, Il Pyo | - |
dc.contributor.author | Song, Yun Heub | - |
dc.contributor.author | Song, Jin Dong | - |
dc.date.accessioned | 2022-07-15T23:38:43Z | - |
dc.date.available | 2022-07-15T23:38:43Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157603 | - |
dc.description.abstract | We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I-on/I-off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and Ion/Ioff ratio. After the simulation, a junction device with N+ Si0.8Ge0.2/P Si/N+ Si0.8Ge0.2 and an area of 4 x 4 um(2) is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1587/elex.12.20150098 | - |
dc.identifier.scopusid | 2-s2.0-84927597730 | - |
dc.identifier.wosid | 000358121800010 | - |
dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.12, no.7, pp.1 - 6 | - |
dc.relation.isPartOf | IEICE ELECTRONICS EXPRESS | - |
dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Magnetic recording | - |
dc.subject.keywordPlus | Magnetic storage | - |
dc.subject.keywordPlus | MRAM devices | - |
dc.subject.keywordPlus | Random access storage | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Switching | - |
dc.subject.keywordAuthor | switching device | - |
dc.subject.keywordAuthor | UHV-CVD | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | N plus PN | - |
dc.subject.keywordAuthor | STT-MRAM | - |
dc.identifier.url | https://www.jstage.jst.go.jp/article/elex/12/7/12_12.20150098/_article | - |
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