N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석
DC Field | Value | Language |
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dc.contributor.author | Park, Tae Jun | - |
dc.contributor.author | Byun, Jong Min | - |
dc.contributor.author | Kim, Young Do | - |
dc.date.accessioned | 2022-07-16T01:07:27Z | - |
dc.date.available | 2022-07-16T01:07:27Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158216 | - |
dc.description.abstract | In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 mu m, 130 mu m, 140 mu m. Formation of the Al doped p(+) layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p(+) layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm(2) of Al paste, wafer bowing in a thickness of 140 mu m reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 mu m reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped p(+) layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm(2) in a wafer with a thickness of 120 mu m. | - |
dc.language | 한국어 | - |
dc.language.iso | ko | - |
dc.publisher | MATERIALS RESEARCH SOC KOREA | - |
dc.title | N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석 | - |
dc.title.alternative | Analysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Do | - |
dc.identifier.doi | 10.3740/MRSK.2015.25.1.16 | - |
dc.identifier.scopusid | 2-s2.0-84929393718 | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF MATERIALS RESEARCH, v.25, no.1, pp.16 - 20 | - |
dc.relation.isPartOf | KOREAN JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.title | KOREAN JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 25 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 16 | - |
dc.citation.endPage | 20 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001957805 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordPlus | Bending (forming) | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Solar cells | - |
dc.subject.keywordPlus | Thermal expansion | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordPlus | Al doped | - |
dc.subject.keywordPlus | Back electrode | - |
dc.subject.keywordPlus | Formation process | - |
dc.subject.keywordPlus | Monocrystalline | - |
dc.subject.keywordPlus | Monocrystalline wafers | - |
dc.subject.keywordPlus | Sheet Resistivity | - |
dc.subject.keywordPlus | Thermal expansion coefficients | - |
dc.subject.keywordPlus | Thin wafers | - |
dc.subject.keywordAuthor | solar cell | - |
dc.subject.keywordAuthor | n-type | - |
dc.subject.keywordAuthor | thin wafer | - |
dc.subject.keywordAuthor | bowing | - |
dc.subject.keywordAuthor | Al doped p(+) layer | - |
dc.identifier.url | http://journal.mrs-k.or.kr/journal/article.php?code=21808 | - |
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