Effect of an oxide buffer layer on the power conversion efficiency in inverted P3HT: PCBM organic photovoltaic cells
- Authors
- Perumal, Rajagembu; Arul, Narayanasamy Sabari; Kim, Tae Whan
- Issue Date
- Dec-2014
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- Organic photovoltaic cells; Oxide buffer layer; Power conversion efficiency; Inverted structure
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.15, no.6, pp.535 - 538
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 15
- Number
- 6
- Start Page
- 535
- End Page
- 538
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158426
- DOI
- 10.36410/jcpr.2014.15.6.535
- ISSN
- 1229-9162
- Abstract
- The influence of the oxide buffer layer (OBL) on the power conversion efficiency (PCE) in inverted poly (3-hexylthiophene) : fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (P3HT: PCBM) photovoltaic cells was investigated. Three different hole buffer layers (HBLs) of poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT: PSS), tungsten-oxide (WO3), or molybdenum-oxide (MoO3) were used to improve the charge generation between the P3HT : PCBM and the Ag electrode. Atomic force microscopy images showed that the surface of the P3HT: PCBM active layer with a MoO3 OBL was smoother that with a PEDOT: PSS layer or a WO3 layer and without a HBL. The PCE of the OPV cells with a MoO3 OBL was higher than those of the inverted OPV cells with a PEDOT: PSS layer or a WO3 layer and without a HBL. The inverted OPV cells containing a MoO3 OBL with a high-work function provided a large interface between the P3HT: PCBM active layer and the Ag electrode due to charge generation, resulting in an enhancement of the device performances for the OPV cells with a MoO3 OBL.
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