Electronic Properties of Transition-Metal-Decorated Silicene
DC Field | Value | Language |
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dc.contributor.author | Lee, Youngbin | - |
dc.contributor.author | Yun, Kyung-Han | - |
dc.contributor.author | Cho, Sung Beom | - |
dc.contributor.author | Chung, Yong-Chae | - |
dc.date.accessioned | 2022-07-16T01:39:47Z | - |
dc.date.available | 2022-07-16T01:39:47Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 1439-4235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158508 | - |
dc.description.abstract | The electronic properties of 3d transition metal (TM)-decorated silicene were investigated by using density functional calculations in an attempt to replace graphene in electronic applications, owing to its better compatibility with Si-based technology. Among the ten types of TM-doped silicene (TM-silicene) studied, Ti-, Ni-, and Zn-doped silicene became semiconductors, whereas Co and Cu doping changed the substrate to a half-metallic material. Interestingly, in cases of Ti- and Cu-doped silicene, the measured band gaps turned out to be significantly larger than the previously reported band gap in silicene. The observed band-gap openings at the Fermi level were induced by breaking the sublattice symmetry caused by two structural changes, that is, the Jahn-Teller distortion and protrusion of the TM atom. The present calculation of the band gap in TM-silicene suggests useful guidance for future experiments to fabricate various silicene-based applications such as a field-effect transistor, single-spin electron source, and nonvolatile magnetic random-access memory. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Electronic Properties of Transition-Metal-Decorated Silicene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Yong-Chae | - |
dc.identifier.doi | 10.1002/cphc.201402613 | - |
dc.identifier.scopusid | 2-s2.0-84915731676 | - |
dc.identifier.wosid | 000346056500026 | - |
dc.identifier.bibliographicCitation | CHEMPHYSCHEM, v.15, no.18, pp.4095 - 4099 | - |
dc.relation.isPartOf | CHEMPHYSCHEM | - |
dc.citation.title | CHEMPHYSCHEM | - |
dc.citation.volume | 15 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 4095 | - |
dc.citation.endPage | 4099 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.subject.keywordPlus | HALF | - |
dc.subject.keywordPlus | SPINTRONICS | - |
dc.subject.keywordAuthor | band gap | - |
dc.subject.keywordAuthor | density functional calculations | - |
dc.subject.keywordAuthor | silicene | - |
dc.subject.keywordAuthor | substitution | - |
dc.subject.keywordAuthor | transition metals | - |
dc.identifier.url | https://chemistry-europe.onlinelibrary.wiley.com/doi/10.1002/cphc.201402613 | - |
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