ScholarWorks@Hanyang University

Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Jiye-
dc.contributor.authorJang, Jaeyoung-
dc.contributor.authorKim, Kyunghun-
dc.contributor.authorKim, Haekyoung-
dc.contributor.authorKim, Se Hyun-
dc.contributor.authorPark, Chan Eon-
dc.date.accessioned2022-07-16T01:54:18Z-
dc.date.available2022-07-16T01:54:18Z-
dc.date.issued2014-11-
dc.identifier.issn0935-9648-
dc.identifier.issn1521-4095-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158615-
dc.description.abstractTuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleThe Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics-
dc.typeArticle-
dc.publisher.location독일-
dc.identifier.doi10.1002/adma.201402363-
dc.identifier.scopusid2-s2.0-84909953275-
dc.identifier.wosid000344783300014-
dc.identifier.bibliographicCitationAdvanced Materials, v.26, pp 7241 - 7246-
dc.citation.titleAdvanced Materials-
dc.citation.volume26-
dc.citation.startPage7241-
dc.citation.endPage7246-
dc.type.docType정기 학술지(letter(letters to the editor))-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusCHAIN-
dc.subject.keywordAuthorfluorinated polymers-
dc.subject.keywordAuthorgate-bias stabilities-
dc.subject.keywordAuthororganic field-effect transistors-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adma.201402363-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 에너지공학과 > 1. Journal Articles
Show simple item record

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Jang, Jae young photo

Jang, Jae young
COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

COPYRIGHT © 2024 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어