Effect of the Fixed Charge Distribution on the Mobility Degradation of the High-k Dielectric MOSFETs
- Authors
- Woo, Myung Hun; Ryu, Ju Tae; Kim, Tae Whan
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- High-k Dielectric; Electron Mobility; Fixed Charge; MOSFETs; Charge Distribution
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8211 - 8214
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 11
- Start Page
- 8211
- End Page
- 8214
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158715
- DOI
- 10.1166/jnn.2014.9891
- ISSN
- 1533-4880
- Abstract
- The effects of the fixed charge in the high-k dielectric layer near a SiO2 layer on the mobility degradation mechanisms were investigated by using a full three-dimensional technology computer aided design simulator. The electron density and the electric field in the channel region were significantly affected due to the fixed charge in the SiO2 layer and the interface between SiO2 and HfO2 layers. The electron density in a channel increased with increasing fixed charge concentration, resulting in a decrease in the mobility. The variation of the vertical electric field due to the fixed charge in the high-k dielectric layer was attributed to the degradation effect. The electric field in a channel deteriorated the electron mobility due to the electron attraction to the heterointerface of the substrate and the interfacial layer. The mobility decreased with increasing fixed charge concentration near the heterointerface of the substrate and the SiO2 layer. The effect of the fixed charge distribution on the mobility degradation of the high-k dielectric MOSFETs was described on the simulation results.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.