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Silicon nanodisk array design for effective light trapping in ultrathin c-Si

Authors
Kim, InhoJeong, Doo SeokLee, Wook SeongKim, Won MokLee, Taek-SungLee, Doh-KwonSong, Jong-HanKim, Joon-KonLee, Kyeong-Seok
Issue Date
Oct-2014
Publisher
OPTICAL SOC AMER
Citation
OPTICS EXPRESS, v.22, no.21, pp.A1431 - A1439
Indexed
SCIE
SCOPUS
Journal Title
OPTICS EXPRESS
Volume
22
Number
21
Start Page
A1431
End Page
A1439
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158881
DOI
10.1364/OE.22.0A1431
ISSN
1094-4087
Abstract
The use of ultrathin c-Si (crystalline silicon) wafers thinner than 20 mu m for solar cells is a very promising approach to realize dramatic reduction in cell cost. However, the ultrathin c-Si requires highly effective light trapping to compensate optical absorption reduction. Conventional texturing in micron scale is hardly applicable to the ultrathin c-Si wafers; thus, nano scale texturing is demanded. In general, nanotexturing is inevitably accompanied by surface area enlargements, which must be minimized in order to suppress surface recombination of minority carriers. In this study, we demonstrate using optical simulations that periodic c-Si nanodisk arrays of short heights less than 200 nm and optimal periods are very useful in terms of light trapping in the ultrathin c-Si wafers while low surface area enlargements are maintained. Double side texturing with the nanodisk arrays leads to over 90% of the Lambertian absorption limit while the surface area enlargement is kept below 1.5.
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