Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최준태 | - |
dc.contributor.author | 길규현 | - |
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2022-07-16T04:10:02Z | - |
dc.date.available | 2022-07-16T04:10:02Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.issn | 1016135X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159677 | - |
dc.description.abstract | MTJ resistance variation is a serious problem for commercializing STT-MRAM, since it narrows the sense margin between high and low resistance state during read operation. Hence, the study on MTJ resistance variation is essential for improving the sence margin and commercializing STT-MRAM. In this paper, we propose a investigation on MTJ characteristics and resistance variation with combination of various causes. Also, we analysed the sense margin of MTJ according to the study of MTJ. | - |
dc.language | 한국어 | - |
dc.language.iso | ko | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석 | - |
dc.title.alternative | Analysis for Resistance Distribution and Sense Margin of Magnetic Tunnel Junction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 송윤흡 | - |
dc.identifier.bibliographicCitation | 전자공학회논문지, v.37, no.1, pp.333 - 335 | - |
dc.relation.isPartOf | 전자공학회논문지 | - |
dc.citation.title | 전자공학회논문지 | - |
dc.citation.volume | 37 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 333 | - |
dc.citation.endPage | 335 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceeding | - |
dc.description.journalClass | 2 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | other | - |
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