STT-MRAM의 새로운 자기 기준 감지 회로

Abstract

We proposed a novel self-reference sense amplifier scheme for spin-transfer-torque magneto-resistance random access memory by parallel write and read. The proposed sense amplifier is sensed by only two cycles of write operation, since a critical current density of a MTJ cell relate with write pulse width. We confirmed that the proposed circuit simulated using 0.18um CMOS technology in HSPICE has no error at tox variation with broad resistance distribution.