Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler Alloy
DC Field | Value | Language |
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dc.contributor.author | Lee, Jung-Min | - |
dc.contributor.author | Kil, Gyu Hyun | - |
dc.contributor.author | Lee, Gae Hun | - |
dc.contributor.author | Choi, Chul Min | - |
dc.contributor.author | Song, Yun-Heub | - |
dc.contributor.author | Sukegawa, Hiroaki | - |
dc.contributor.author | Mitani, Seiji | - |
dc.date.accessioned | 2022-07-16T05:25:03Z | - |
dc.date.available | 2022-07-16T05:25:03Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160306 | - |
dc.description.abstract | The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler Alloy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun-Heub | - |
dc.identifier.doi | 10.3938/jkps.64.1144 | - |
dc.identifier.scopusid | 2-s2.0-84899969013 | - |
dc.identifier.wosid | 000336313500010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.64, no.8, pp.1144 - 1149 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 64 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1144 | - |
dc.citation.endPage | 1149 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001871912 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordAuthor | Magnetic tunnel junction | - |
dc.subject.keywordAuthor | Co2FeAl | - |
dc.subject.keywordAuthor | MgO | - |
dc.subject.keywordAuthor | Interface insertion layer | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.64.1144 | - |
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