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Novel Sense Amplifierto improve Sense Margin for Spin Transfer-Torque Magneto-resistive RAM
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kil, Gyu-Hyun | - |
| dc.contributor.author | Song, Yun Heub | - |
| dc.date.accessioned | 2022-07-16T06:17:18Z | - |
| dc.date.available | 2022-07-16T06:17:18Z | - |
| dc.date.created | 2021-05-13 | - |
| dc.date.issued | 2014-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160811 | - |
| dc.description.abstract | We present for a novel sense amplifier to greatly improve sense margin for spin-transfer-torque magneto-resistive RAM by using common source amplifier with current source load. The proposed sense amplifier can obtain the sense margin increased to 1000% at low read current and TMR ratio. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | 한국산업정보학회 | - |
| dc.title | Novel Sense Amplifierto improve Sense Margin for Spin Transfer-Torque Magneto-resistive RAM | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
| dc.identifier.bibliographicCitation | International Industrial Information Systems Conference 2014, pp.72 - 73 | - |
| dc.relation.isPartOf | International Industrial Information Systems Conference 2014 | - |
| dc.citation.title | International Industrial Information Systems Conference 2014 | - |
| dc.citation.startPage | 72 | - |
| dc.citation.endPage | 73 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Proceeding | - |
| dc.description.journalClass | 2 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE06077167 | - |
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)