Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, In-Su | - |
dc.contributor.author | Lee, Donghyun | - |
dc.contributor.author | Lee, Keon-Hoon | - |
dc.contributor.author | You, Hyosang | - |
dc.contributor.author | Moon, Dae Young | - |
dc.contributor.author | Park, Jinsub | - |
dc.contributor.author | Nanishi, Yasuishi | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2022-07-16T07:32:34Z | - |
dc.date.available | 2022-07-16T07:32:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161524 | - |
dc.description.abstract | In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.1016/j.tsf.2013.03.056 | - |
dc.identifier.scopusid | 2-s2.0-84885330712 | - |
dc.identifier.wosid | 000325092000026 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.546, pp.118 - 123 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 546 | - |
dc.citation.startPage | 118 | - |
dc.citation.endPage | 123 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | C-PLANE SAPPHIRE | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | THIN | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Stress | - |
dc.subject.keywordAuthor | Wafer bowing | - |
dc.subject.keywordAuthor | Nano-columns | - |
dc.subject.keywordAuthor | LT GaN buffer | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609013005026?via%3Dihub | - |
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